Photoelectric properties of nano-ZnO fabricated in mesoporous silica film |
| |
| Affiliation: | 1. Presidential Endowed Chair for “Platinum Society”, The University of Tokyo, Ito International Research Center, 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-0033, Japan;2. Department of Chemical System Engineering, The University of Tokyo, 7-3-1, Hongo, Bunkyo-ku, Tokyo 113-8656, Japan;3. International Institute for Carbon-Neutral Energy Research, Kyusyu University, 744 Motooka Nishi-ku, Fukuoka 819-0395, Japan;1. Institute of Informatics and Telematics (IIT), Italian National Research Council (CNR), Pisa, Italy;2. Grupo de Redes de Computadores, Engenharia de Software e Sistemas (GREat), Departamento de Engenharia de Teleinformatica, Universidade Federal do Cear (UFC), Fortaleza-CE, Brazil;3. Computer and Software Systems, University of Washington, Bothell, USA;4. Department of Computing and Communications, Lancaster University, UK;5. Institute for Information Systems and Networking (ISIN), University of Applied Sciences of Southern Switzerland (SUPSI), Switzerland;1. Department of Burns, Heilongjiang Provincial Hospital, Zhongshan Road, Harbin, Heilongjiang 150036, China;2. Science and Education Department, Research Center for Family Planning of Guangxi Zhuang Autonomous Region, China;3. Department of Burns, The Third Affiliated Hospital of Inner Mongolia Medical University, Burns Institute of Inner Mongolia, China |
| |
| Abstract: | ![]()
Via electrochemical deposition, nanosized zinc oxide (nano-ZnO) is prepared within a template of mesoporous silica (MPS) film fabricated on a conductive substrate. Enhanced dark current from the nano-ZnO in MPS film is obtained because nano-ZnO is located in the nanosized pores of MPS. Most of the nano-ZnO surface is prevented from contacting ambient oxygen, and the combination of oxygen with free electrons of this n-type semiconductor is avoided; thus the free electrons increase the conductivity. Photodetection to ultraviolet (UV) light is examined at the exciting wavelength of 365 nm. The photocurrent with fast growing and decay times is observed due to the photo-generated holes being trapped at the interface between ZnO and pore walls of MPS film, while producing the photocurrent by photo-generated electrons. Photoluminescence (PL) spectrum of nano-ZnO in MPS film at room temperature shows increased amount of oxygen vacancies in these nano-ZnO, which might contribute to the conductivity. |
| |
| Keywords: | |
| 本文献已被 ScienceDirect 等数据库收录！ |
|
