C-axis-oriented Bi3.25La0.75Ti3O12 ferroelectric thin film fabricated by chemical solution deposition |
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| Affiliation: | 1. School of Mathematical Sciences, Henan Institute of Science and Technology, Xinxiang 453003, PR China;2. Key Laboratory of Measurement and Control of CSE (Ministry of Education), School of Automation, Southeast University, Nanjing 210096, PR China;3. School of Science, Huzhou Teachers College, Huzhou 313000, PR China;1. State Key Laboratory on Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University, 2699 Qianjin Street, Changchun 130012, China;2. Department of Applied Physics, Shenzhen University, Shenzhen 518060, China;1. Aston Institute of Materials Research and Department of Electrical, Electronic & Power Engineering, Aston University, Birmingham B4 7ET, United Kingdom;2. Wuhan Institute of Marine Electric Propulsion, Wuhan 430070, China;3. School of Engineering and Technology, University of Hertfordshire, College Lane, Hatfield AL10 9AB, United Kingdom |
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| Abstract: | ![]()
C-axis-oriented Bi3.25La0.75Ti3O12 (BLT) ferroelectric thin films were successfully prepared by chemical solution deposition. According to X-ray diffraction, it is found that the orientation degree increases with the increase of sintering temperature, and at the same time the grain morphology changes from equiaxed to plate-like. Due to the dense morphology and [Bi2O2]2+ layer of c-preferred orientation of BLT film sintered at 650 °C, it exhibits the lowest leakage current density at room temperature. Additionally, a linear relation between V0.5 and log(J / T2) is found, suggesting the behavior of leakage current of BLT films obeys the Schottky emission model. P–E loops show that the c-axis-oriented BLT ferroelectric film exhibits low polarization and small coercive field. |
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