Fabrication of needle-shaped GaN nanowires by ammoniating Ga2O3 films on MgO layers deposited on Si (111) substrates |
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| Affiliation: | 1. Institute of Semiconductor, Shandong Normal University, No. 88 East Culture Road, Ji''nan 250014, China;2. School of Information Science and Engineering, Ji''nan University, No. 106 Jiwei Road, Ji''nan 250022, China;1. Laboratory of Optoelectronics Materials and Devices, School of Science, Beijing University of Posts and Telecommunications, Beijing 100876, China;2. State Key Laboratory of Information Photonics and Optical Communications, Beijing University of Posts and Telecommunications, Beijing 100876, China;3. Department of Physics, The State University of New York at Potsdam, Potsdam, NY 13676-2294, USA;1. Université de Monastir, Faculté des Sciences, Unité de Recherche sur les Hétéro-Epitaxies et Applications (URHEA) 5000 Monastir, Tunisia;2. Université de Monastir, Faculté des Sciences, Laboratoire de Physico-Chimie des Matériaux, Unité de service commun de recherche “High Resolution X-ray Diffractometer”, 5000 Monastir, Tunisia;3. Laboratoire de Microscopie à Champ Proche, Université de Montpellier II, 34095 Montpellier Cedex 5, France;1. Department of Physics, GC University, Lahore-54000, Pakistan;2. Rafi M. Chaudhri Chair, Centre for Advanced Studies in Physics, GC University, Lahore-54000, Pakistan;1. State Key Laboratory of ASIC and System, Shanghai Institute of Intelligent Electronics & Systems, School of Microelectronics, Fudan University, Shanghai, 200433, China;2. Department of Electrical and Electronic Engineering, Synchrotron Light Application Center, Saga University, Saga, 840-8502, Japan;3. Shanghai Key Laboratory of Modern Optical System, School of Optical-Electrical and Computer Engineering, University of Shanghai for Science and Technology, Shanghai, 200093, China;1. Chongqing Key Laboratory of Photo-Electric Functional Materials, College of Physics and Electronic Engineering, Chongqing Normal University, Shapingba, Chongqing, 401331, China;2. Laboratory of Information Functional Materials and Devices, School of Science, Beijing University of Posts and Telecommunications, Beijing, 100876, China;3. College of Physics, Chongqing University, Shapingba, Chongqing, 401331, China;4. College of Science, Chongqing University of Posts and Telecommunications, Chongqing, China;1. Physics of Interfaces and Nanomaterials, MESA+ Institute for Nanotechnology, University of Twente, P.O. Box 217, 7500 AE Enschede, The Netherlands;2. Ion Beam Physics and Materials Research, Helmholz—Zentrum Dresden – Rossendorf, P.O. Box 510119, 01314 Dresden, Germany |
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| Abstract: | Needle-shaped GaN nanowires have been synthesized on Si (111) substrate through ammoniating Ga2O3/MgO films under flowing ammonia atmosphere at the temperature of 950 °C. The as-synthesized GaN nanowires were characterized by X-ray diffraction (XRD), Fourier transformed infrared (FTIR) spectroscopy, scanning electron microscope (SEM) and high-resolution transmission electron microscopy (HRTEM). The results demonstrate that these nanowires are hexagonal GaN and possess a smooth surface with an average diameter about 200 nm and a length ranging from 5 μm to 15 μm. In addition, the diameters of these nanowires diminish gradually. The growth mechanism of crystalline GaN nanowires is discussed briefly. |
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