High power GaN‐HEMT SPDT switches for microwave applications |
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| Authors: | Andrea Bettidi Antonio Cetronio Walter Ciccognani Marco De Dominicis Claudio Lanzieri Ernesto Limiti Antonio Manna Marco Peroni Claudio Proietti Paolo Romanini |
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| Affiliation: | 1. Department of RF Components and GaAs Foundry, SELEX Sistemi Integrati S.p.A., Via Tiburtina Valeria, 00131 Rome, Italy;2. Department of Electronic Engineering, University of Roma Tor Vergata, Via del Politecnico 1, 00133 Rome, Italy;3. Department of Hardware Design, Elettronica S.p.A., Via Tiburtina Valeria, 00131 Rome, Italy |
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| Abstract: | In this article, the design, fabrication, and on‐wafer test of X‐Band and 2–18 GHz wideband high‐power SPDT MMIC switches in AlGaN/GaN technology are presented. The switches have demonstrated state‐of‐the‐art performance and RF fabrication yield better than 65%. Linear and power measurements for different control voltages have been reported and an explanation of the dependence of the power performances on the control voltage is given. In particular, the X‐band switch exhibits a 0.4 dB compression level at 10 GHz when driven by a 38 dBm input signal. The wideband switch shows a compression level of 1 dB at an input drive higher than 38 dBm across the entire bandwidth. © 2009 Wiley Periodicals, Inc. Int J RF and Microwave CAE, 2009. |
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| Keywords: | AlGaN/GaN monolithic microwave integrated circuit (MMIC) power switch |
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