纳米晶Ba（Zr0．2Ti0．8）O3薄膜的外延生长与介电特性

用脉冲激光沉积工艺在半导体（001）SrTiO3：ω（Nb）=1．0％单晶基片上，外延生长出Ba（Zr0.2Ti0.8）O3（简称BZT）介电薄膜．在650℃原位退火10min，薄膜为（001）外延生长的晶粒．薄膜的晶化特征与表面形貌用薄膜X-ray衍射仪和原子力显微镜测量完成．BZT薄膜（002）峰的半峰宽只有0．72°，说明薄膜晶化良好；薄膜的平均晶粒为90nm，表面均方根粗糙度为4．3nm，说明薄膜表面平整．在室温、100kHz和500kV／cm条件下，BZT的最大介电常数和调谐百分率分别达到317和65％．

Dielectric Properties of Nanocrystalline Ba（ Zr0.2Ti0.8 ）O3 Thin Films Epitaxially Grown on （001） SrTiO3： Nb Single Crystal Substrate

Highly oriented Ba（ Zr0.2Ti0.8 ）O3 thin films are grown on （001） SrTiO3： ω（Nb） = 1.0 % single crystal substrates using pulsed laser deposition and the dielectric properties of the films are evaluated. The thin films are in situ annealed at 650℃ for 10 min. and the highly （001）-oriented BZT thin films are obtained. The structure and surface morphology of the films have been characterized by X-ray diffraction （XRD） and atomic force microscopy （AFM）. XRD and AFM characterization reveal a good crystallinity ： the average size is about 90 nm and the root mean square （rms） roughness of the film surface is 4.3 nm. The dielectric constant and dielectric tunability of the Ba（ Zr0.2Ti0.8 ）O3 thin films are 317 and 65 % ,respectively.