Aging and Stability of GaN High Electron Mobility Transistors and Light-Emitting Diodes With $hbox{TiB}_{2}$- and Ir-Based Contacts

There is interest in developing more stable contacts to a variety of GaN-based devices. In this paper, we give two examples of devices that show improved thermal stability when boride or Ir diffusion barriers are employed in ohmic-contact stacks. AlGaN/GaN high electron mobility transistors (HEMTs) were fabricated with Ti/Al/X/Ti/Au source-drain ohmic (where X is or Ir) contacts and were subjected to long-term annealing at 350 . By comparison with companion devices with conventional Ti/Al/Ni/Au ohmic contacts, the HEMTs with boride-based ohmic metal showed superior stability of both source-drain current and transconductance after 25 days of aging at 350 . The gate current for standard HEMTs increases during aging, and the standard ohmic contacts eventually fail by shorting to the gate contact. Similarly, InGaN/GaN multiple quantum well light-emitting diodes (MQW-LEDs) were fabricated with either Ni/Au//Ti/Au or Ni/Au/Ir/Au p-ohmic contacts. Both of these contacts showed superior long-term thermal stability compared to LEDs with conventional Ni/Au contacts.