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Characterization method of thermomechanical parameters for microelectronic materials
Authors:O Perat  J M Dorkel  E Scheid  P Temple Boyer  Y S Chung  A Peyre-Lavigne  M Zecri  P Tounsi
Affiliation:a Divisional Digital DNA Laboratories, Motorola SPS, Toulouse, France
b LAAS-CNRS, Toulouse, France
c Division of SMARTMOS Technology Center, Digital DNA Laboratories, Motorola SPS, Mesa, AZ, USA
Abstract:Reliability of thermomechanical simulations is critically linked to the accuracy of the mechanical properties that govern the behaviour of structure, like Young's modulus (E) and coefficient of thermal expansion (CTE). For many cases, the values found in literatures are dealing with bulk properties without detailed information on temperature effects. To address such issues, it is necessary to measure the materials parameters as a function of temperature. The measurement of CTE is usually accomplished by evaluating the thermal deflections of a subjected material layer deposited on a substrate, providing that E is known at a specific temperature of experiment. A bilayer method, based on theory of elasticity, is proposed to determine both E and CTE for a given temperature with a good resolution. This paper presents the theoretical analysis, the design and process of the microsystem test structures, and the main calculation results.
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