Microwave performance of InGaAs/InAlAs/InP SISFETs |
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| Authors: | Feuer M.D. Kuo J.M. Shunk S.C. Behringer R.E. Chang T.-Y. |
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| Affiliation: | AT&T Bell Labs., Holmdel, NJ; |
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| Abstract: | Microwave S-parameter measurements and equivalent-circuit modeling of In0.53Ga0.47As/In0.52Al0.48 As/InP semiconductor-insulator-semiconductor FETs (SISFETs) of 1.1-μm gate length are discussed. The devices incorporated wide-bandgap buffers, self-aligned contact implants, and refractory air-bridge gates. Their DC I-V characteristics displayed sharp pinchoff, good output conductance of 10-20 mS/ss, and extrinsic transconductance up to 220 ms/mm at room temperature. The maximum unity-current-gain frequency was 27 GHz. Gate resistance was found to be the dominant factor limiting microwave power gain |
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