Improvement of hydrogenated amorphous silicon germanium thin film solar cells by different p-type contact layer |
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| Affiliation: | 1. Department of Energy Science, Sungkyunkwan University, Suwon 440-746, Republic of Korea;2. College of Information and Communication Engineering, Sungkyunkwan University, Suwon 440-746, Republic of Korea;1. Laboratory Physico-Chemistry of Advanced Materials, University of Djillali Liabes, BP 89, Sidi- Bel- Abbes 22000, Algeria;2. Institute of Nano Electronic Engineering, University Malaysia Perlis, 01000 Kangar, Perlis, Malaysia;3. Materials Science Laboratory, School of Physics, Vigyan Bhavan, Devi Ahilya University, Khandwa Road Campus, Indore 452001, India;4. Djillali Liabes University, Faculty of Exact Sciences, Department of Physics, PO Box 089, Sidi Bel Abbes 22000, Algeria;1. School of Physical Science and Technology, Southwest Jiaotong University, Key Laboratory of Advanced Technologies of Materials, Ministry of Education of China, Chengdu 610031, People''s Republic of China;2. Bond and Band Engineering Group, Sichuan Provincial Key Laboratory (for Universities) of High Pressure Science and Technology, Southwest Jiaotong University, Chengdu 610031, People''s Republic of China;3. State Key Laboratory of Solidification Processing, Northwestern Polytechnical University, Xi''an 710072, People''s Republic of China;1. Department of Physics, Manonmaniam Sundaranar University, Tirunelveli 627012, Tamilnadu, India;2. CISL, Department of Physics, Annamalai University, Annamalai Nagar 608002, Tamilnadu, India;1. Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China;2. State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China |
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| Abstract: | In this study, we report an appreciably increased efficiency from 6% up to 9.1% of hydrogenated amorphous silicon germanium (a-SiGe:H) thin film solar cells by using a combination of different p-doped window layers, such as boron doped hydrogenated amorphous silicon (p-a-Si:H), amorphous silicon oxide (p-a-SiOx:H), microcrystalline silicon (p-µc-Si:H), and microcrystalline silicon oxide (p-µc-SiOx:H). Optoelectronic properties and the role of these p-layers in the enhancement of a-SiGe:H cell efficiency were also examined and discussed. An improvement of 1.62 mA/cm2 in the short-circuit current density (Jsc) is attributed to the higher band gap of p-type silicon oxide layers. In addition, an increase in open-circuit voltage (Voc) by 150 mV and fill factor (FF) by 6.93% is ascribed to significantly improved front TCO/p-layer interface contact. |
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| Keywords: | a-SiGe:H thin film solar cells Hydrogenated microcrystalline silicon oxide p-type contact layer |
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