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Direct bonding of silicon wafers with a diffusion layer |
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| Authors: | V. B. Voronkov E. G. Guk V. A. Kozlov V. B. Shuman |
| Affiliation: | (1) A. F. Ioffe Physicotechnical Institute, Russian Academy of Sciences, St. Petersburg |
| Abstract: | The possibility of solid-phase direct bonding of silicon wafers having p +-or n +-type diffusion layers with a high surface dopant concentration has been demonstrated for the first time. Pis’ma Zh. Tekh. Fiz. 24, 1–5 (March 26, 1998) |
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