电感耦合等离子体质谱法测定多晶硅中18个痕量元素

建立了电感耦合等离子体质谱法(ICP-MS)对光伏用多晶硅中B,Cu,Fe,Al,K,Ca,Cr,Mn,Fe,Co,Ni,Cu,Zn,As,Mo,W,Cd,Pb共计18个可能共存的杂质元素同时定量测定的方法。以硝酸、氢氟酸分解多晶硅试样,称重法确定加入试剂的量。采用动态反应池(DRC)技术,在池内引入氨气(NH3)作为反应气体来消除质谱干扰。在选定的条件下,被测元素的检出限为0.8~6.9 pg/g(3σ),样品的加标回收率在83.0%~106%之间,相对标准偏差(RSD)为0.27%~2.7%(n=11)。所建立的分析方法实现了对光伏用多晶硅样品中痕量元素的全分析,实际样品的测定结果与参考值相符。

Determination of eighteen trace elements in multicrystal silicon by inductively coupled plasma mass spectrometry

A method was established for simultaneous and quantitative determination of trace B, Na, Mg, Al, K, Ca, Cr, Mn, Fe, Co, Ni, Cu, Zn, As, Mo, W, Cd and Pb in multicrystal silicon by inductively coupled plasma mass spectrometry(ICP-MS).The samples were decomposed with nitric acid and hydrofluoric acid, and the adding amount of reagents was obtained by weighing method.The mass spectral interference was eliminated by introducing ammonia gas as reaction gas in the dynamic reaction cell system(DRC).Under the optimal conditions, the detection limit was 0.8-6.9 pg/g (3σ).The recovery of standard addition was in the range of 83.0%-106%, and the relative standard deviation(RSD)was 0.27%-2.7%(n=11).The proposed method has been used for complete analysis of photovohaic muliticrystal silicon samples, and the results were in good accordance with the reference values.