Bistable low temperature (77 K) impurity breakdown in <Emphasis Type="Italic">p</Emphasis>-type 4<Emphasis Type="Italic">H</Emphasis>-SiC |
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| Authors: | P A Ivanov A S Potapov T P Samsonova |
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| Affiliation: | 1.Ioffe Physical Technical Institute,Russian Academy of Sciences,St. Petersburg,Russia |
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| Abstract: | Low-temperature (77 K) forward current-voltage characteristics of 4H-SiC p
+-p-n
+-n (substrate) mesa epitaxial diode structures have been measured. The characteristics are S-shaped, which is accounted for by the bistable nature of the impact ionization of frozen-out acceptor atoms of aluminum. |
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