Fugitive Diffusion Barrier for Integration of Sol-Gel-Derived Lead Titanate with Oxidized Silicon Substrates |
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| Authors: | John S Wright Joseph M Schwartz Lanny D Schmidt Lorraine Falter Francis |
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| Affiliation: | Department of Chemical Engineering and Materials Science, University of Minnesota, Minneapolis, Minnesota 55455 |
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| Abstract: | The crystalline phase development and microstructural changes with heating of sol-gel-derived lead titanate (PT) particles and films on silica with and without a fugitive (or removable) diffusion barrier layer were investigated. Amorphous gel-derived PT particles were deposited on SiO2-coated TEM grids with and without polyimide (PI) or carbon barrier layers between SiO2 and PT. TEM analysis showed that PI or carbon barriers prevented reaction between the gel-derived PT particles and SiO2. PT particles crystallize and then the PI or carbon film decomposes. Sol-gel-derived PT films were deposited on oxidized Si substrates (Si/SiO2) with and without a PI barrier layer. Perovskite PT films were prepared on Si/SiO2 substrates with a PI barrier; however, some porosity remained in the films. Identically prepared films without the PI barrier formed a mixture of pyrochlore and perovskite. X-ray photoelectron spectroscopy results indicate that the PI film pre- vents the diffusion of Si into the PT film. |
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