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Bending of Semiconducting Cantilevers Under Photothermal Excitation |
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| Authors: | Yaqin Song Dragan M. Todorovic Bernard Cretin Pascal Vairac Jie Xu Jintao Bai |
| Affiliation: | 1. State Key Laboratory for Strength and Vibration of Mechanical Structures, School of Aerospace, Xi’an Jiaotong University, Shaanxi, Xi’an?, 710049, People’s Republic of China 2. National Key Laboratory of Photoelectric Technology and Functional Materials (Culture Base) and Shaanxi Provincial Key Laboratory of Photoelectronic Technology, Northwest University, Shaanxi, Xi’an?, 710069, People’s Republic of China 3. Institute for Multidisciplinary Research, University of Belgrade, K. Viseslava 1, Belgrade?, 11030, Serbia 4. FEMTO-ST, Université de Franche-Comté, CNRS, ENSMM, Besan?on, UTBM, France |
| Abstract: | In this study, the elastic vibrations of semiconducting cantilevers, which were excited with a frequency-modulated uniform laser beam, were studied theoretically and experimentally. The three-dimensional distributions for the carrier density and temperature were obtained analytically using the Green function method. The elastic bending of a cantilever was given by the theory of a thin rectangular plate. Using an optical interferometric setup, the experimental photothermal signals were investigated near the first resonant frequency and the results showed that the theoretical calculation results were in good agreement with that of the experimental measurement. |
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