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紫外激光与半导体相互作用研究进展综述
引用本文:刘晨星,张大勇. 紫外激光与半导体相互作用研究进展综述[J]. 光电技术应用, 2012, 27(2): 21-26. DOI: 10.3969/j.issn.1673-1255.2012.02.007
作者姓名:刘晨星  张大勇
作者单位:1.中国工程物理研究院流体物理研究所,四川绵阳,621900;2.中国工程物理研究院流体物理研究所,四川绵阳,621900
摘    要:紫外激光与半导体相互作用是当今国内外研究的热点。综述了紫外激光与半导体相互作用在光电子产业、激光加工、激光表面改性等方面的应用。介绍了紫外激光与半导体相互作用的基本原理,总结了紫外激光烧蚀半导体的理论模型,包括热传导模型、载流子耦合扩散模型、光化学模型、表面热蒸发模型、双温模型、表面充电模型等。总结了关于损伤形貌、烧蚀阈值和紫外激光损伤半导体机理的实验研究。提出了紫外激光与半导体相互作用可能的研究和新的应用方向。

关 键 词:激光辐照  半导体  损伤机理  损伤阈值
收稿时间:2012-02-24

Research Progress of Ultraviolet Laser Interaction with Semiconductors
LIU Chen-xing,ZHANG Da-yong. Research Progress of Ultraviolet Laser Interaction with Semiconductors[J]. Electro-Optic Technology Application, 2012, 27(2): 21-26. DOI: 10.3969/j.issn.1673-1255.2012.02.007
Authors:LIU Chen-xing  ZHANG Da-yong
Affiliation:(Institute of Fluid Physics,China Academy of Engineering Physics,Mianyang621900,China)
Abstract:The ultraviolet (UV) laser interaction with semiconductors has a considerable interest in recent years. The applications of UV laser interaction with semiconductors are reviewed, including photon-electron industry, laser machining and laser surface modification. The theory of UV laser interaction with semiconductors is introduced, and the theory model of UV laser ablation on the semiconductor is summarized, including heat conduction model, carrier coupling diffusion model, photochemical model, thermal surface vaporization model, double-temperature model and laser induced surface charging model. The experimental results of damage morphology, ablation threshold and mechanisms of semiconductor damaged by UV laser ablation are summarized. The proposals of possible research and new application field of UV laser interaction with semiconductors are presented.
Keywords:laser irradiation  semiconductor  damage mechanism  damage threshold
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