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A new extrinsic dc model for high speed lattice matched InAlAs/InGaAs/InP HEMT with a predicted 135 GHz cut-off frequency |
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| Authors: | Jyotika Jogi Mridula Gupta R. S. Gupta |
| Affiliation: | a Department of Physics and Electronics, Atma Ram Sanatan Dharm College, University of Delhi South Campus, Benito Juarez Road, New Delhi 110021, India b Semiconductor Device Research Laboratory, Department of Electronic Science, University of Delhi South Campus, Benito Juarez Road, New Delhi 110021, India |
| Abstract: | Extrinsic lattice matched InAlAs/InGaAs/InP HEMT model, incorporating the parasitic source and drain resistance, for very high frequency application is developed. The current voltage characteristics and the transconductance have been evaluated and the influence of carrier concentration dependent mobility on frequency has also been analyzed. A cut-off frequency of 135 GHz is obtained. |
| Keywords: | LMHEMT Low field mobility Sheet carrier concentration Transconductance Cut-off frequency |
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