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Comparison of modulation doped effect in negative differential resistance field effect transistors (NDRFETs) |
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| Authors: | Rong-Chau Liu Wen-Chau Liu |
| Affiliation: | aChung Shan Institute of Science and Technology, P.O. Box 90008-9-3, Lung-Tan, Tao-Yuan, Taiwan;bDepartment of Electrical Engineering, National Cheng-Kung University, 1 University Road, Tainan, Taiwan |
| Abstract: | N-shaped negative differential resistance field effect transistors (NDRFETs) have been fabricated and demonstrated. The interesting N-shaped NDRs are three terminal controlled phenomena. This N-shaped NDR behavior is found in the higher drain-to-source voltage (VDS) regime and is obtained both at positive and negative gate-to-source bias (VGS). We believe that the NDR phenomena are attributed to the real space transfer (RST) effect. Due to the modulation doped effect and different barrier height, the NDR behavior can easily be controlled. The influence of VGS bias on the NDR characteristics is also investigated. |
| Keywords: | Field effect transistors Semiconductor doping Composition effects Semiconductor device manufacture Semiconductor device testing Negative differential resistance field effect transistors (NDRFET) Drain-to-source voltage Real space transfer (RST) effect |
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