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GaAs field-effect transistors by selective sulphur-ion implantation |
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| Authors: | Mizutani T. Ishida S. Fujimoto M. |
| Affiliation: | NTT, Electrical Communication Laboratories, Musashino, Japan; |
| Abstract: | GaAs field-effect transistors without a mesa structure have been fabricated by selective sulphur-ion implantation into Cr-doped GaAs substrates. The transconductance was 16 mS and the maximum oscillation frequency was 30 GHz. |
| Keywords: | |