| 新型部分耗尽SOI器件体接触结构 |
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| 引用本文： | 宋文斌,毕津顺,韩郑生. 新型部分耗尽SOI器件体接触结构[J]. 半导体技术, 2008, 33(11) |
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| 作者姓名： | 宋文斌 毕津顺 韩郑生 |
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| 作者单位： | 中国科学院,微电子研究所,北京,100029 |
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| 摘 要： | 提出了一种部分耗尽SOI MOSFET体接触结构,该方法利用局部SIMOX技术在晶体管的源、漏下方形成薄氧化层,采用源漏浅结扩散,形成体接触的侧面引出,适当加大了Si膜厚度来减小体引出电阻.利用ISE-TCAD三维器件模拟结果表明,该结构具有较小的体引出电阻和体寄生电容、体引出电阻随器件宽度的增加而减小、没有背栅效应.而且,该结构可以在不增加寄生电容为代价的前提下,通过适当的增加Si膜厚度的方法减小体引出电阻,从而更有效地抑制了浮体效应.
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| 关 键 词： | 绝缘体上硅 浮体效应 体接触 寄生电容 体电阻 |
Novel Body-Contact Structure Technology for Partially Depleted SOI MOSFET |
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| Song Wenbin,Bi Jinshun,Han Zhengsheng. Novel Body-Contact Structure Technology for Partially Depleted SOI MOSFET[J]. Semiconductor Technology, 2008, 33(11) |
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| Authors: | Song Wenbin Bi Jinshun Han Zhengsheng |
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| Affiliation: | Song Wenbin,Bi Jinshun,Han Zhengsheng(Institute of Microelectronics of Chinese Academy of Sciences,Beijing 100029,China) |
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| Abstract: | A novel body contact technique for partially depleted SOI MOSFET was proposed.Two thin buried-oxide layers under source/drain on a SOI chip were formed near the Si surface with low dose and low energy local SIMOX technology.And a body-under-source structure is easy to be formed because of the shallow source/drain junction depth in this structure,which has a thick Si film.From ISE-TCAD 3-D simulation results,this structure has little body resistance and body parasitic capacitance and has no back-gate effect.... |
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| Keywords: | SOI(Si on insulator) floating body effect body contact parasitic capacitance body resistance |
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