| X 射线双晶衍射在新材料研究中的应用 |
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| 引用本文： | 朱南昌,李润身,陈京一.X 射线双晶衍射在新材料研究中的应用[J].材料研究学报,1991,5(2):129-133. |
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| 作者姓名： | 朱南昌 李润身 陈京一 |
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| 作者单位： | 中国科学院上海冶金研究所
(朱南昌，李润身)，中国科学院上海冶金研究所(陈京一) |
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| 摘 要： | 本文介绍了 X 射线双晶衍射术的基本原理。描述了双晶衍射技术在半异体材料的离子注入、单层及多层异质结外延膜、应变超晶格等新型材料研究中的应用。给出了双晶衍射对 Si 中高能 B~+注入和 In_xGa_(1-x)As/GaAs 超晶格研究的实例。
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| 关 键 词： | 离子注入 X 射线双晶衍射 计算机模拟 |
| 收稿时间： | 1991-04-25 |
| 修稿时间： | 1991-04-25 |
APPLICATIONS OF X-RAY DOUBLE CRYSTAL DIFFRACTION TO INVESTGATION OF NEW MATERIALS |
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| ZHU Nanchang LI Runshen CHEN Jingyi.APPLICATIONS OF X-RAY DOUBLE CRYSTAL DIFFRACTION TO INVESTGATION OF NEW MATERIALS[J].Chinese Journal of Materials Research,1991,5(2):129-133. |
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| Authors: | ZHU Nanchang LI Runshen CHEN Jingyi |
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| Affiliation: | ZHU Nanchang LI Runshen CHEN Jingyi (Shanghai Institute of Metallurgy,Academia Sinica) |
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| Abstract: | The fundamental theory of X-ray double-crystal diffractometry is pres-ented in this paper.The applications of this technique to investigation or new structuralmaterials,which include ion implantation into semiconductor materials,single or multipleepitaxial layers,strained-layer superlattices and other new elctronic and optical materials,have been introduced.As the examples,the results of high energy B~+ implanted intoSi(100) wafer and In_xGa_(1-x)AS/GaAs strained-layer superlattice are also given. |
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| Keywords: | ion implantation X-ray double-crystal diffraction computer simulation |
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