| MgO缓冲层对PZT/AlGaN/GaN异质结构电学性能的影响 |
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| 引用本文： | 张菲,朱俊,罗文博,郝兰众,李言荣.MgO缓冲层对PZT/AlGaN/GaN异质结构电学性能的影响[J].功能材料,2011,42(6):992-995. |
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| 作者姓名： | 张菲 朱俊 罗文博 郝兰众 李言荣 |
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| 作者单位： | 电子科技大学,电子薄膜与集成器件国家重点实验室,四川,成都,610054 |
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| 基金项目： | 国家重点基础研究发展计划(973计划)资助项目(61363) |
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| 摘 要： | 采用脉冲激光沉积(PLD)技术,以MgO作为缓冲层,在AlGaN/GaN半导体异质结构上沉积了Pb(Zr0.52T0.48) O3 (PZT)铁电薄膜,从而形成金属-铁电-介质-半导体结构(MFIS).XRD扫描结果表明,通过MgO缓冲层对界面结构的优化,实现了PZT薄膜沿(111)面择优取向生长.电流-电压(I-V ...
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| 关 键 词： | 脉冲激光沉积 PZT MgO C-V I-V |
Influence of MgO buffer layer on electrical properties of PZT/AlGaN/GaN heterostructure |
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| ZHANG Fei,ZHU Jun,LUO Wen-bo,HAO Lan-zhong,LI Yan-rong.Influence of MgO buffer layer on electrical properties of PZT/AlGaN/GaN heterostructure[J].Journal of Functional Materials,2011,42(6):992-995. |
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| Authors: | ZHANG Fei ZHU Jun LUO Wen-bo HAO Lan-zhong LI Yan-rong |
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| Affiliation: | ZHANG Fei,ZHU Jun,LUO Wen-bo,HAO Lan-zhong,LI Yan-rong(State Key Laboratory of Electronic Thin Films and Integrated Devices,University of Electronic Science and Technology of China,Chengdu 610054,China) |
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| Abstract: | A metal-ferroelectric-insulater-semiconductor structure(MFIS) was fabricated by depositing a Pb(Zr0.52T0.48)O3(PZT) film on the surface of the AlGaN/GaN template with MgO as a buffer layer by pulsed laser deposition(PLD).X-ray diffraction studies show that the preferred orientation growth of(111) PZT film on AlGaN/GaN heterostructure could be realized by inserting MgO buffer layer.From the I-V results,we can see that the electrical properties of the system has been greatly improved by the introducing of MgO... |
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| Keywords: | pulse laser deposition(PLD) PZT MgO C-V I-V |
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