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Features of the current-voltage characteristics and temperature dependences of electric conductivity in porous silicon layers |
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| Authors: | Sorokin L. M. Sokolov V. I. Kalmykov A. E. Chernyaev A. V. |
| Affiliation: | 1.Ioffe Physical Technical Institute, Russian Academy of Sciences, St. Petersburg, 194021, Russia ;2.St. Petersburg Mining Institute, (Technical University), St. Petersburg, 199106, Russia ; |
| Abstract: | A method of separating porous silicon (por-Si) layer without deformation from a silicon substrate, which virtually excludes almost any risk of subsequent degradation of the isolated por-Si layer is proposed. The current-voltage characteristics of por-Si have been measured in a temperature interval of 300–255 K. Direct measurements of the conductivity of por-Si have been performed for the first time and it is established that the conductivity has an activation nature for the current passage parallel to the por-Si sample surface. |
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