| 蚀刻腔条件对刻蚀工艺的影响研究 |
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| 引用本文： | 陈乐乐,朱亮,包大勇,季高明,蔡辉,李东霞.蚀刻腔条件对刻蚀工艺的影响研究[J].半导体技术,2008,33(12). |
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| 作者姓名： | 陈乐乐 朱亮 包大勇 季高明 蔡辉 李东霞 |
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| 作者单位： | 1. 上海微系统与信患技术研究所,上海,200050;上海宏力半导体有限公司,上海,201203
2. 上海宏力半导体有限公司,上海,201203 |
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| 摘 要： | 在ULSI制造中蚀刻腔条件的变化是导致刻蚀工艺重复性差的一个重要原因.在刻蚀过程中,一层聚合物会淀积在蚀刻腔壁上.通过XPS分析得知,聚合物的主要成分为(CF2)n.实验过程发现不同的聚合物量会影响等离子体中CF2基团的浓度.聚合物越多,CF2浓度越高;反之,聚合物越少,CF2 浓度就越低.在这种情况下,蚀刻腔上的聚合物被认为是等离子中CF2基团的一个源.CF2浓度的变化又导致最终刻蚀特性(CD,蚀刻率)的变化和工艺漂移.
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| 关 键 词： | 蚀刻腔条件 SiO2刻蚀 关键尺寸 |
Study on the Influence of Chamber Wall Condition on Etch Process |
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| Chen Lele,Zhu Liang,Bao Dayong,Ji Gaoming,Cai Hui,Li Dongxia.Study on the Influence of Chamber Wall Condition on Etch Process[J].Semiconductor Technology,2008,33(12). |
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| Authors: | Chen Lele Zhu Liang Bao Dayong Ji Gaoming Cai Hui Li Dongxia |
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| Affiliation: | Chen Lele1,2,Zhu Liang1,Bao Dayong2,Ji Gaoming2,Cai Hui2,Li Dongxia2 (1.Shanghai Institute of Microsystem , Information Technology,Shanghai 200050,China,2.Grace Semiconductor Manufacturing Corporation,Shanghai 201203,China) |
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| Abstract: | The variation of chamber wall condition is one of the key factors of process irreproducibility in manufacturing of ULSI.During etching,a polymer film would be deposited on chamber wall,and the main composition is(CF2)n examined by XPS.Experiment result shows that different polymer coverage amount on chamber wall will result in different CF2 concentrations in plasma.More polymers on chamber wall produces higher CF2 concentration and fewer polymers lead to lower CF2 concentration.In this case,polymer on chamb... |
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| Keywords: | chamber wall condition SiO2 etching critical dimension |
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