| 硅异质结和赝异质结双极器件研究进展 |
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| 引用本文： | 郑茳 许居衍. 硅异质结和赝异质结双极器件研究进展[J]. 电子学报, 1995, 23(10): 144-147 |
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| 作者姓名： | 郑茳 许居衍 |
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| 作者单位： | 东南大学－华晶无锡微电子应用研究所 |
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| 摘 要： | 本文作者结合自己的工作，综述了硅异质结和赝异质结双极器件的研究进展，指出ＧｅＳｉ ＨＢＴ将成为双极结构的主流技术，硅赝异质结器件也将在低温应用等方面显示出优势。
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| 关 键 词： | 硅 异质结 赝异质结 双极器件 双极晶体管 |
Research and Progress of Silicon Heterojunction and Pseudo-Heterojunctgion Bipolar Devices |
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| Zheng Jiang,Xu Juyan. Research and Progress of Silicon Heterojunction and Pseudo-Heterojunctgion Bipolar Devices[J]. Acta Electronica Sinica, 1995, 23(10): 144-147 |
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| Authors: | Zheng Jiang Xu Juyan |
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| Abstract: | The research and progress of silicon heterojunction and pseudo-heterojunction bipolar devices are summarized on the basis of our previous work. It is indicated that GeSi HBT will be the dominant technique of silicon bipolar stuctures,and silicon pseudo-heterojunction bipolartransistor has the superiority for low temperature application. |
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| Keywords: | Silicon Heterojunction Pseudo-heterojunction Bipolar device |
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