Lattice mismatch and surface morphology studies of In x Ga1−x As epilayers grown on GaAs substrates |
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| Authors: | R Pal M Singh R Murlidharan S K Agarwal D Pal D N Bose |
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| Affiliation: | (1) Solid State Physics Laboratory, Lucknow Road, 110 054 Delhi, India;(2) Semiconductor Division, Materials Science Centre, Indian Institute of Technology, 371 302 Kharagpur, India |
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| Abstract: | ![]()
In x Ga1−x As (0·06≤x≤0·35) epilayers were grown on GaAs substrates by atmospheric pressure metal organic chemical vapour deposition technique. Surface morphology and lattice mismatch in the InGaAs/GaAs films of different compositions were studied. Cross-hatched patterns were observed on the surface of the epilayers for bulk alloy composition up tox≈0·25. Forx>0·3, a rough textured surface morphology was observed. |
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| Keywords: | Epitaxial layer metal organic chemical vapour deposition InGaAs lattice mismatch |
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