Resistive switching effects of HfO2 high-k dielectric

Resistive switching behavior of HfO₂ high-k dielectric has been studied as a promising candidate for emerging non-volatile memory technology. The low resistance ON state and high resistance OFF state can be reversibly altered under a low SET/RESET voltage of ±3 V. The memory device shows stable retention behavior with the resistance ratio between both states maintained greater than 103. The bipolar nature of the voltage-induced hysteretic switching properties suggests changes in film conductivity related to the formation and removal of electronically conducting paths due to the presence of oxygen vacancies induced by the applied electric field. The effect of annealing on the switching behavior was related to changes in compositional and structural properties of the film. A transition from bipolar to unipolar switching behavior was observed upon O₂ annealing which could be related to different natures of defect introduced in the film which changes the film switching parameters. The HfO₂ resistive switching device offers a promising potential for high density and low power memory application with the ease of processing integration.