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Nanotwin formation and its physical properties and effect on reliability of copper interconnects |
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| Authors: | Di Xu Vinay Sriram Jenn-Ming Yang Gery R. Stafford Inka Zienert Petra Hofmann |
| Affiliation: | a Department of Materials Science and Engineering, University of California, 420 Westwood Plaza, Los Angeles, CA 90095, USA b Materials Science and Engineering Laboratory, National Institute of Standards and Technology, Gaithersburg, MD, USA c AMD Saxony LLC and Co. KG, Dresden, Germany |
| Abstract: | Ultra-fine grained copper with a large amount of nano-scale twin boundaries has high mechanical strength and maintains normal electrical conductivity. The combination of these properties may lead to promising applications in future Si microelectronic technology, especially as interconnect material for air-gap and free-standing copper technologies. Based on first principles calculations of total energy and in-situ stress measurements, high stress followed by stress relaxation during the Cu film deposition seems to have contributed to nanotwin formation. Nanoindentation studies have shown a larger hardness for copper with a higher nanotwin density. The effect of Cu nanotwin boundaries on grain growth was investigated by scanning electron microscopy (SEM), electron backscatter diffraction (EBSD) and transmission electron microscopy (TEM). The presence of a high density of nanotwin boundaries may improve the reliability of Cu interconnects. |
| Keywords: | Nanotwin Free-standing Cu interconnect First principles calculations Electromigration |
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