| 硅通孔化学机械平坦化中铜去除的电化学与选择性研究 |
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| 引用本文： | 刘旭阳,张保国,王如.硅通孔化学机械平坦化中铜去除的电化学与选择性研究[J].电镀与涂饰,2020(9):554-559. |
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| 作者姓名： | 刘旭阳 张保国 王如 |
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| 作者单位： | 河北工业大学电子信息工程学院;河北工业大学天津市电子材料与器件重点实验室 |
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| 摘 要： | 利用极化曲线测量法研究了甘氨酸和过氧化氢浓度及pH对硅通孔(TSV)化学机械平坦化(CMP)中铜腐蚀的影响。结果表明:甘氨酸对铜的腐蚀随其浓度增大而增强;随着过氧化氢浓度增大,铜腐蚀电位逐渐增大;在p H为10时铜的腐蚀效果最佳。CMP实验表明,在不同浓度的甘氨酸和过氧化氢之下,抛光速率可调,达1.9~5.8μm/min,铜表面粗糙度为5~29 nm,铜钽去除速率比为20~50。
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| 关 键 词： | 硅通孔 化学机械抛光 铜 腐蚀 电化学 表面粗糙度 材料去除速率 |
Study on electrochemistry and selectivity of copper removal in TSV chemical mechanical planarization |
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| LIU Xuyang,ZHANG Baoguo,WANG Ru.Study on electrochemistry and selectivity of copper removal in TSV chemical mechanical planarization[J].Electroplating & Finishing,2020(9):554-559. |
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| Authors: | LIU Xuyang ZHANG Baoguo WANG Ru |
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| Affiliation: | (School of Electronic and Information Engineering,Hebei University of Technology,Tianjin 300130,China) |
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| Abstract: | The effects of the concentrations of glycine and hydrogen peroxide and pH on corrosion characteristics of copper during chemical mechanical planarization(CMP) of through silicon via(TSV) were studied polarization curve measurement. The results showed that the corrosion of copper was increased with the increasing of glycine concentration. The corrosion potential of copper was shifted toward positive gradually as the hydrogen peroxide concentration was increased. The corrosion of copper was best at pH 10. The results of CMP experiments showed that the removal rate of copper varied within 1.9-5.8 μm/min by adjusting the concentrations of glycine and hydrogen peroxide. The roughness of copper surface polished was 5-29 nm, and the copper-to-tantalum removal rate ratio was 20-50. |
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| Keywords: | through silicon via chemical mechanical planarization copper corrosion electrochemistry surface roughness material removal rate |
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