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Improved Schottky Contacts on |
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| Authors: | T.N. Oder P. Martin A.V. Adedeji T. Isaacs-Smith J.R. Williams |
| Affiliation: | (1) Department of Physics and Astronomy, Youngstown State University, Youngstown, OH 44555, USA;(2) Department of Physics, Georgia Southern University, Statesboro, GA 30460, USA;(3) Department of Physics, Auburn University, Auburn, AL 36849, USA;(4) Present address: Department of Materials Science and Engineering, University of Illinois at Urbana–Champaign, Urbana, IL 61801, USA |
| Abstract: | We report on improved electrical properties and thermal stability of ZrB2 Schottky contacts deposited on n-type 4H-SiC at temperatures between 20°C and 800°C. The Schottky barrier heights (SBHs) determined by current-voltage measurements increased with deposition temperature, from 0.87 eV for contacts deposited at 20°C to 1.07 eV for those deposited at 600°C. The Rutherford backscattering spectroscopy (RBS) spectra of these contacts revealed a decrease in oxygen peak with an increase in the deposition temperature and showed no reaction at the ZrB2/SiC interface. These results indicate improved electrical and thermal properties of ZrB2/SiC Schottky contacts, making them attractive for high-temperature applications. |
| Keywords: | Schottky contacts Schottky barrier height (SBH) n-type 4H-SiC thermal stability |
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