FeCuNbCrSiB薄膜的制备及其巨磁阻抗效应研究

采用磁控溅射方法,在玻璃基片上制备了非晶的Fe73.5Cu1Nb3Cr0.5Si13B9薄膜及三明治结构M/C/M(M为Fe73.5Cu1Nb3Cr0.5Si13B9;C为Cu)的多层膜。在频率(1~40)MHz下,研究了薄膜材料的巨磁阻抗(GMI)效应随外加磁场的变化关系。结果表明:单层膜的GMI效应较小,只有4.4%;而三明治结构多层膜的GMI效应,比单层膜有较大幅度的提高,在5MHz、120Oe下,纵向和横向GMI效应分别达–17.4%和–20.7%。薄膜材料的纵向GMI效应随外加磁场变化呈现先增后减,而横向GMI效应随外加磁场的增加而单调递减,其变化规律与薄膜的易轴取向有很大关系。

Study on Preparation and Giant Magneto-impedance Effect of FeCuNbCrSiB Thin Film

Amorphous Fe73.5Cu1Nb3Cr0.5Si13B9 thin film were prepared by sputtering method onto glass substrate, the giant magneto-impedance (GMI) effect has been investigated in single layer Fe73.5Cu1Nb3Cr0.5Si13B9 film and sandwiched Fe73.5Cu1Nb3Cr0.5Si13B9/Cu/ Fe73.5Cu1Nb3Cr0.5Si13B9 films in the frequency range of (1~40) MHz. The results show that the GMI effect is low in single layer Fe73.5Cu1Nb3Cr0.5Si13B9 film; while, the GMI effect in sandwiched films are greatly improved, and the GMI values of –17.4% and –20.7% are obtained for a frequency of 5 MHz at a magnetic field of 120 Oe with magnetic field applied along the longitudinal and transverse direction, respectively. The longitudinal GMI effect increases with applied magnetic field, reaching a maximum at a field of near the anisotropy field; however, the transverse GMI effect decreases with the increase of the magnetic field. The value of GMI effect is correlated to the easy axis direction.