Zn靶与掺铝ZnO靶共溅射制备ZnO:Al薄膜及其性能

采用Zn靶和ZnO(掺2%Al2O3(质量分数))陶瓷靶在玻璃衬底上共溅射沉积Al掺杂ZnO薄膜,即ZnO:Al透明导电薄膜,研究Zn靶溅射功率(0～90 W)和衬底温度(室温、100℃和200℃)对薄膜结构、形貌、光学和电学性能的影响。结果表明:按双靶共溅射工艺制备的ZnO:Al薄膜的晶体结构均为六角纤锌矿结构,且随着Zn靶溅射功率的增加,薄膜的结晶质量呈现出先改善后变差的规律,薄膜中的载流子浓度逐渐升高,电阻率逐渐降低,而薄膜的光学性能受其影响不大;随着衬底温度的升高,薄膜的结晶性能得到改善,薄膜的可见光透过率增强,电阻率降低。

Properties of ZnO:Al thin films deposited by co-sputtering with Zn target and Al-doped ZnO target

The Al-doped ZnO(AZO) transparent conductive thin films were deposited on glass substrates by co-sputtering with Zn target and ZnO ceramic target.The effects of sputtering power(0-90 W) of Zn target and substrate temperature on structure,surface,optical and electrical properties were investigated.The results indicate that all ZnO:Al thin films obtained by co-sputtering show hexagonal structure.And with the increase of Zn target sputtering power,the film crystallization quality is improved earlier and then deteriorated gradually,the carrier concentration also increases,and the resistivity of films lower accordingly.But the effect is not obvious for Zn target power on optical properties of films.While with the rise of substrate temperature,the crystallization of thin films is improved,the optical transmittance is enhanced and the resistivity is reduced.