MBE growth and properties of GaN and AlxGa1−xN on GaN/SiC substrates期刊界 All Journals 搜尽天下杂志传播学术成果专业期刊搜索期刊信息化学术搜索

MBE growth and properties of GaN and AlxGa1−xN on GaN/SiC substrates

Authors:	M A L Johnson Shizuo Fujita W H Rowland W C Hughes Y W He N A El-Masry J W Cook J F Schetzina J Ren J A Edmond

Affiliation:	(1) Department of Physics, North Carolina State University, 27695-8202 Raleigh, NC;(2) Cree Research, Inc., 2810 Meridian Parkway, 27713 Durham, NC;(3) Present address: Department of Electronic Science and Engineering, Kyoto University, 606-01 Kyoto, Japan

Abstract:	The growth of GaN and AlGaN by molecular beam epitaxy (MBE) has been studied using GaN/SiC substrates. The GaN/SiC substrates consisted of ∼3 μm thick GaN buffer layers grown on 6H-SiC wafers by metalorganic vapor phase epitaxy (MOVPE) at Crée Research, Inc. The MBE-grown GaN films exhibit excellent structural and optical properties—comparable to the best GaN grown by MOVPE. Al_xGa_1−xN films (x ∼ 0.06-0.08) and Al_xGa_1−xN/GaN multi-quantum-well structures which display good optical properties were also grown by MBE on GaN/SiC substrates.

Keywords:	Al_xGa₁₋ xN GaN GaN/SiC substrates molecular beam epitaxy transmission electron microscopy
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