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A 900 MHz,21 dBm CMOS linear power amplifier with 35% PAE for RFID readers
Authors:Han Kefeng  Cao Shengguo  Tan Xi  Yan Na  Wang Junyu  Tang Zhangwen  Min Hao
Affiliation:State Key Laboratory of ASIC & System, Fudan University, Shanghai 201203,China
Abstract:A two-stage differential linear power amplifier(PA)fabricated by 0.18 μm CMOS technology is presented.An output matching and harmonic termination network is exploited to enhance the output power,efficiency and harmonic performance.Measurements show that the designed PA reaches a saturated power of 21.1 dBm and the peak power added efficiency(PAE)is 35.4%,the power gain is 23.3 dB from a power supply of 1.8 V and the harmonics are well controlled.The total area with ESD protected PAD is 1.2 × 0.55 mm2.System measurements also show that this power amplifier meets the design specifications and can be applied for RFID reader.
Keywords:CMOS  power amplifier  PAE  power matching  RFID  reader
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