Si-film growth using liquid phase epitaxy method and its application to thin-film crystalline Si solar cell

We have developed a new apparatus for the growth of liquid-phase epitaxy (LPE)-Si films on 5 in Si wafers. We have obtained high growth rates of 0.1–1.0 μm/min and minority-carrier lifetime of average value of 10 μs over the whole of wafer, whereas the thickness uniformity was degraded when rotating the wafers in the solvent. We also demonstrated to growth of LPE-Si films on porous Si layers and to separate the Si films from the porous layers. A 9.5% cell was obtained using a LPE-Si film after separation.