Electrical stress on irradiated thin gate oxide partially depleted SOI nMOSFETs |
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| Affiliation: | 1. STMicroelectronics, 850 rue Jean Monnet, F-38926 Crolles, France;2. CEA, LETI, MINATEC Campus, 17 Avenue des Martyrs, F-38054 Grenoble, France;3. IMEP-LAHC, MINATEC Campus, 3 Parvis Louis Néel, F-38016 Grenoble, France;1. Institut Mines-Télécom, Télécom ParisTech, LTCI-CNRS-UMR 5141, 46 rue Barrault, 75013 Paris, France;2. IEF L''Institut d''Électronique Fondamentale, Univ Paris-Sud, CNRS 8622, 91405 Orsay, France;3. School of Electronics and Information, Beihang University, Beijing, China |
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| Abstract: | The effect of hot-carrier stress on 60 MeV proton irradiated thin gate oxide partially depleted SOI nMOSFETs has been studied. The results are compared with those from the electrical stress of non-irradiated devices. Whereas no significant differences are observed for the front channel degradation, hot-electron trapping in the buried oxide is found to be enhanced in the irradiated devices. This hot-electron trapping leads to a compensation or neutralization of the effects caused by the radiation-induced positive trapped charges. It is shown that a similar hot-electron trapping enhancement can be achieved in non-irradiated devices stressed under certain back gate bias conditions. |
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