Oxide interface studies using second harmonic generation |
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| Affiliation: | 1. Department of Physics and Astronomy, Vanderbilt University, Nashville, TN, USA;2. Department of Electrical Engineering and Computer Science, Vanderbilt University, Nashville, TN, USA;3. Ibis Technology Corp., Danvers, MA, USA;4. MEMC Electronic Materials, St. Peters, MO, USA;1. Computer Science and Electrical Engineering Department, University of Maryland, Baltimore County, Baltimore, MD, USA;2. Queensland Micro and Nanotechnology Centre, Griffith University, Nathan, QLD, Australia;1. The Collaborative Innovation Center of Integrated Computation and Chip Security, Chengdu University of Information Technology, Chengdu, 610225, China;2. The State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu, 610054, China;1. School of Microelectronics, Xidian University, Key Laboratory of Wide Band-Gap Semiconductor Materials and Devices, Xi’an 710071, China;2. Graduate Institute of Electronics Engineering, National Taiwan University, 10617 Taipei, Taiwan;3. Graduate Institute of Photonics and Optoelectronics, National Taiwan University, 10617 Taipei, Taiwan;1. Department of Visual Optics, Seoul National University of Science and Technology (Seoultech), Seoul, 01811, Republic of Korea;2. Departmet of Materials Science and Engineering, Seoul National University of Science and Technology (Seoultech), Seoul, 01811, Republic of Korea;1. Institute of Applied Research and Semiconductor Physics Department, Vilnius University, Saulėtekis Ave. 9, Bld. 3, LT-10222, Vilnius, Lithuania;2. Department of ECE and CIE, Rensselaer Polytechnic Institute, Troy, NY 12180, USA;3. Sensor Electronic Technology, Inc., 1195 Atlas Road, Columbia, SC 29209, USA;1. Science and Technology on Thermostructural Composite Materials Laboratory, Northwestern Polytechnical University, Xi’an, 710072, China;2. Institut für Materialwissenschaft, Technische Universität Darmstadt, Otto-Berndt-Straße 3, D-64287, Darmstadt, Germany |
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| Abstract: | ![]()
We report experiments using a non-invasive second harmonic generation (SHG) technique to characterize buried Si/SiO2 interfaces and also SIMOX thin film silicon-on-insulator (SOI) wafers. The measurements demonstrate that the SHG response can provide an indication of the quality of the buried oxide interfaces, by providing information on surface roughness, strain, defects, and metallic contamination. The potential application of SHG for comprehensive buried interface characterization and as a non-contact metrology tool for process control is described. |
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