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Kinetic roughness in epitaxy (experimental) |
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| Authors: | M. A. Cotta R. A. Hamm S. N. G. Chu R. Hull L. R. Harriott H. Temkin |
| Affiliation: | a UNICAMP, IFGW-DFA, CP 6165, 13081, Campinas SP, Brazil b AT&T Bell Laboratories, Murray Hill, NJ 07974, USA c Electrical Engineering Department, Colorado State University, Fort Collins, CO 80523, USA |
| Abstract: | Different regimes of growth morphology are observed for InP films prepared by metal-organic molecular beam epitaxy. Below a well-defined minimum growth temperature Tgmin kinetic roughening is observed. From the temperature dependence of roughening near Tgmin for substrates with different misorientations we estimate a value of 0.4-0.5 eV for the Schwoebel-Erlich step crossing barrier. At growth temperatures higher than Tgmin we observe the formation of localized surface defects associated with vacancies. The density of defects is strongly dependent on the thermodynamic and kinetic growth parameters. |
| Keywords: | Author Keywords: Indium phosphide Surface diffusion Molecular beam epitaxy Surface roughness |
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