A surface-normal coupled-quantum-well modulator at 1.55 /spl mu/m |
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| Authors: | T.H. Stievater W.S. Rabinovich P.G. Goetz R. Mahon S.C. Binari |
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| Affiliation: | Naval Res. Lab., Washington, DC, USA; |
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| Abstract: | We demonstrate a surface-normal coupled-quantum-well InGaAs-InAlAs electroabsorption modulator that provides optical modulation with a contrast ratio in excess of 1.5 at only 6 V. The device operates at 1.55 /spl mu/m and is based on a novel strain-balanced layer structure. The operating voltage is about two times lower than that of a conventional square quantum-well modulator that achieves a comparable contrast ratio. |
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