| 阶梯栅氧结构的NLDMOS热载流子效应研究 |
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| 引用本文： | 韩雁,张斌,丁扣宝,张世峰,韩成功,胡佳贤,朱大中.阶梯栅氧结构的NLDMOS热载流子效应研究[J].半导体学报,2010,31(12):124006-5. |
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| 作者姓名： | 韩雁 张斌 丁扣宝 张世峰 韩成功 胡佳贤 朱大中 |
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| 基金项目： | 核高基国家科技重大专项（2009ZX01033-001-003） |
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| 摘 要： | 本文对一种新型的阶梯栅氧结构的NLDMOS（Step Gate Oxide NLDMOS , SG-NLDMOS）的热载流子效应进行了研究。采用直流电压应力实验、TCAD仿真、电荷泵测试等方法，对退化现象进行了分析，并提出了退化机制。然后研究了漂移区注入剂量对器件热载流子效应的影响，结果表明低的漂移区注入剂量可以更有效地减小器件导通电阻的退化。
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| 关 键 词： | 热载流子退化 栅氧化层 诱导性 LDMOS晶体管 CAD仿真 应力试验 直流电压 应力条件 |
| 收稿时间： | 5/7/2010 3:47:27 PM |
| 修稿时间： | 6/3/2010 2:38:17 PM |
Hot-carrier-induced on-resistance degradation of step gate oxide NLDMOS |
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| Han Yan,Zhang Bin,Ding Koubao,Zhang Shifeng,Han Chenggong,Hu Jiaxian and Zhu Dazhong.Hot-carrier-induced on-resistance degradation of step gate oxide NLDMOS[J].Chinese Journal of Semiconductors,2010,31(12):124006-5. |
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| Authors: | Han Yan Zhang Bin Ding Koubao Zhang Shifeng Han Chenggong Hu Jiaxian and Zhu Dazhong |
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| Affiliation: | Institute of Microelectronics & Photoelectronics, Zhejiang University, Hangzhou 310027, China;Institute of Microelectronics & Photoelectronics, Zhejiang University, Hangzhou 310027, China;Institute of Microelectronics & Photoelectronics, Zhejiang University, Hangzhou 310027, China;Institute of Microelectronics & Photoelectronics, Zhejiang University, Hangzhou 310027, China;Institute of Microelectronics & Photoelectronics, Zhejiang University, Hangzhou 310027, China;Institute of Microelectronics & Photoelectronics, Zhejiang University, Hangzhou 310027, China;Institute of Microelectronics & Photoelectronics, Zhejiang University, Hangzhou 310027, China |
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| Abstract: | The hot-carrier-induced on-resistance degradations of step gate oxide NLDMOS (SG-NLDMOS) transistors are investigated in detail by a DC voltage stress experiment, a TCAD simulation and a charge pumping test. For different stress conditions, degradation behaviors of SG-NLDMOS transistors are analyzed and degradation mechanisms are presented. Then the effect of various doses of n-type drain drift (NDD) region implant on Ron degradation is investigated. Experimental results show that a lower NDD dosage can reduce the hot-carrier induced Ron degradation effectively, which is different from uniform gate oxide NLDMOS (UG-NLDMOS) transistors. |
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| Keywords: | SG-NLDMOS Ron degradation charge-pumping interface state positive oxide-trapped charge |
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