Electro deposited In2S3 buffer layers for CuInS2 solar cells |
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| Authors: | T. Todorov J. Carda P. Escribano A. Grimm J. Klaer R. Klenk |
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| Affiliation: | aDepartamento de Química Inorgánica y Orgánica, Universidad Jaime I, Campus Riu Sec, 12071Castellón de la Plana 12071, Spain;bHahn-Meitner-Institut, Glienickerstr. 100, D14109 Berlin, Germany |
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| Abstract: | We report the electro deposition of In2S3 buffer layers for CuInS2 solar cells. All materials and deposition conditions were selected taking into account environmental, economic and technological aspects of a potential transfer to large volume industrial production. Different bath compositions and electro deposition parameters were studied. The obtained films exhibited complete substrate coverage, confirmed by SEM and XPS. In/S ratio close to 2/3 was obtained. XPS measurements detected the presence of indium hydroxide, transforming into oxide upon anneal at 200 °C. Maximum photoelectric conversion efficiency of 7.1% was obtained, limited mainly by a low fill factor (51%). Further process optimization is expected to lead to efficiencies comparable to CdS buffers. So far, open-circuit voltages as high as 660 mV were demonstrated. |
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| Keywords: | Buffer Indium Electro deposition Chalcopyrite |
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