1.Rzhanov Institute of Semiconductor Physics,Russian Academy of Sciences, Siberian Branch,Novosibirsk,Russia;2.Ioffe Institute,St. Petersburg,Russia;3.Novosibirsk State University,Novosibirsk,Russia
Abstract:
The effect of atomic aluminum deposited onto sapphire substrates with different nitridation levels on the quality of AlN layers grown by ammonia molecular-beam epitaxy is investigated. The nitridation of sapphire with the formation of ~1 monolayer of AlN is shown to ensure the growth of layers with a smoother surface and better crystal quality than in the case of the formation of a nitrided AlN layer with a thickness of ~2 monolayers. It is demonstrated that the change in the duration of exposure of nitrided substrates to the atomic aluminum flux does not significantly affect the parameters of subsequent AlN layers.