Tapered thickness MQW waveguide BH MQW lasers |
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| Authors: | Kobayashi H Ekawa M Okazaki N Aoki O Ogita S Soda H |
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| Affiliation: | Fujitsu Labs. Ltd., Atsugi; |
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| Abstract: | We propose and demonstrate a novel 1.3 μm InGaAsP/InGaAsP multiple-quantum-well (MQW) BH Fabry-Perot laser diode monolithically integrated with a MQW tapered thickness waveguide. A selective area growth (SAG) technique is used to fabricate the tapered thickness waveguide with low absorption loss and to integrate it with the MQW gain region with a high coupling efficiency. We achieve very narrow vertical and lateral far-field FWHM of 11.8° and 8.0°, with low threshold current of 19 mA and high slope efficiency of 0.25 mW/mA |
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