Si基JBS整流二极管的设计与制备

基于JBS整流二极管理论,详细介绍了一种Si基JBS整流二极管设计方法、制备工艺及测试结果。在传统肖特基二极管(SBD)有源区,利用光刻和固态源扩散工艺形成掺硼的蜂窝状结构,与n型衬底形成pn结,反向偏置时抑制了因电压增加引起的金属-半导体势垒高度降低,减小了漏电流;采用离子注入形成两道场限环的终端结构,有效防止了边缘击穿,提高了反向击穿电压。对制备的器件使用Tektronix 370B可编程特性曲线图示仪进行了I-V特性测试,结果表明本文设计的Si基JBS整流二极管正向压降VF=0.78 V(正向电流IF=5 A时),反向击穿电压可达340 V。

Design and Fabrication of Si-Based Junction-Barrier-Schottky Rectifier Diode

The detailed design,fabrication and test results of the JBS diode were presented.Using lithography and solid source diffusion in the fabrication process, a p+ honeycomb structure was formed in the active region of the traditional power SBD,which formed pn junction with n-type substrate.When the JBS diode is in reverse state,the Schottky contact will pinch-off which can effectively prevent lowering of metal-semiconductor barrier and reduce leakage current.Using the ion implantation,the double field limiting rings(FLR) terminal structure was formed,which effectively prevented the breakdown of edge and increased reverse breakdown voltage.The I-V characteristics of the JBS rectifier diode were tested by Tektronix 370B programmable graphic instrument.The results show that the forward voltage(VF) is 0.78 V @ IF = 5 A and reverse break voltage(BV) can reach 340 V.