| 高电源抑制比低温漂带隙基准源设计 |
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| 引用本文： | 朱龙飞,莫太山,叶甜春. 高电源抑制比低温漂带隙基准源设计[J]. 电子技术应用, 2013, 39(5) |
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| 作者姓名： | 朱龙飞 莫太山 叶甜春 |
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| 作者单位： | 中国科学院微电子研究所,北京,100029 |
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| 摘 要： | 设计并实现了一种新的高PSRR、低TC带隙基准源。重点研究了带隙基准源电源抑制能力,尤其是高频PSRR,达到宽频带范围PSRR高性能指标。采用0.35μm BiCMOS工艺进行仿真,结果表明,PSRR在1 Hz频率下达-108.5 dB,在15 MHz频率下达-58.9 dB;采用二次温漂补偿电路使得带隙基准源常温下输出参考电压1.183 V,在-40℃95℃温度范围内,温漂系数低达1.5 ppm/℃。
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| 关 键 词： | 带隙基准 电源抑制比 二次温漂补偿 |
A high PSRR and low temperature coefficient bandgap reference |
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| Zhu Longfei , Mo Taishan , Ye Tianchun. A high PSRR and low temperature coefficient bandgap reference[J]. Application of Electronic Technique, 2013, 39(5) |
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| Authors: | Zhu Longfei Mo Taishan Ye Tianchun |
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| Abstract: | A new BGR circuit with high PSRR and low TC is proposed.The PSRR performance of BGR is discussed in detail,especially at high frequency.Then,a high PSRR over a wide frequency range is achieved.The circuit is fabricated in 0.35 μm BiCMOS process.Simulation results show that the PSRR is-108.5 dB at 1 Hz,and-58.9 dB at 15 MHz.A second order curvature compensated circuit is designed.The temperature coefficient is as low as 1.5 ppm/℃ over a temperature range-40 ℃ to 95 ℃. |
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| Keywords: | bandgap reference PSRR second order curvature compensated |
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