The characterization of retention properties of metal–ferroelectric (PbZr0.53Ti0.47O3)–insulator (Dy2O3, Y2O3)–semiconductor devices

Metal–ferroelectric–insulator–semiconductor (MFIS) capacitors and field effect transistors with the structures of Al/Pb (Zr_0.53, Ti_0.47) O₃ (PZT)/Dy₂O₃/Si and Al/PZT/Y₂O₃/Si were fabricated. The memory windows of Al/PZT/Dy₂O₃/Si and Al/PZT/Y₂O₃/Si capacitors with sweep voltage of 10 V are 1.03 V and 1.48 V, respectively. The effect of band offset on the memory window was discussed. The retention times of Al/PZT/Y₂O₃/Si and Al/PZT/Dy₂O₃/Si MFISFETs are 11.5 days and 11.1 h, respectively. The longer retention time of Al/PZT/Y₂O₃/Si field effect transistors is attributed to the larger conduction band offset at the Y₂O₃/Si interface (2.3 eV) compared to that of Dy₂O₃/Si (0.79 eV).