| 用喇曼光谱测定Ⅲ-Ⅴ族半导体带隙和载流子浓度 |
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| 引用本文： | 杨锦赐 连世阳. 用喇曼光谱测定Ⅲ-Ⅴ族半导体带隙和载流子浓度[J]. 固体电子学研究与进展, 1992, 12(3): 251-254 |
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| 作者姓名： | 杨锦赐 连世阳 |
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| 作者单位： | 厦门大学(杨锦赐，连世阳，张声豪)，厦门大学(颜永美) |
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| 摘 要： | 用共振喇曼散射研究半导体的能带结构,实验观察了Ga_(1-x)Al_xAs直接带隙单声子和GaP在间接带隙(г_(3v)—X_(3c))附近的双声子共振特性。阐述了由喇曼光谱测量确定Ⅲ—V族半导体的载流子浓度。
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| 关 键 词： | 喇曼光谱 半导体带隙 载流子浓度 |
Determination of Energy Gaps and Carrier Concentration of Ⅲ-Ⅴ Semiconductors by Raman Spectroscopy |
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| Yang Jinci,Lian Shiyang,Zhang Shenghao,Yan Yongmei. Determination of Energy Gaps and Carrier Concentration of Ⅲ-Ⅴ Semiconductors by Raman Spectroscopy[J]. Research & Progress of Solid State Electronics, 1992, 12(3): 251-254 |
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| Authors: | Yang Jinci Lian Shiyang Zhang Shenghao Yan Yongmei |
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| Abstract: | The energy band structure of semiconductors is studied by resonant Raman scattering. Resonant behaviour of one -phonon mode at the Ga1-xAlxAs direct gap and two -phonon mode at the GaP indirect gap (X3c) are investigated. A method by measuring their Raman spectroscopy has developed for determining the carrier concentration of II-V semiconductors. |
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| Keywords: | Raman Spectroscopy Energy Gap of Semiconductor Carrier Concentration |
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