| 掺氧氮化硅发光二极管的发光特性研究 |
| |
| 引用本文： | 黄锐,王旦清,王祥,陈坤基.掺氧氮化硅发光二极管的发光特性研究[J].激光与红外,2010,40(8):901-903. |
| |
| 作者姓名： | 黄锐 王旦清 王祥 陈坤基 |
| |
| 作者单位： | 1. 韩山师范学院物理与电子工程系,广东,潮州,521041
2. 南京大学物理学院,江苏,南京,210093 |
| |
| 基金项目： | 广东省自然科学基金项目(No.8152104101000004)资助。 |
| |
| 摘 要： | 采用等离子体增强化学气相沉积方法低温制备非晶氮化硅薄膜,在低温下以氧气为气源,等离子体氧化非晶氮化硅薄膜,以这层薄作为有源层制备电致发光器件。实验结果表明以此方法制备的器件在正向偏置电压下可观测到强烈的黄绿光,发光峰位于540 nm,而且电致发光开启电压低,仅为6 V,功耗小。光致发光谱和电致发光谱测量表明发光来自同一种发光中心,即与Si-O相关的发光中心。
|
| 关 键 词： | 氮化硅 电致发光 光致发光 |
| 收稿时间： | 2010/4/19 0:00:00 |
Light emission from a-SiN:O light-emitting diodes |
| |
| HUANG Rui,WANG Dan-qing,WANG Xiang and CHEN Kun-ji.Light emission from a-SiN:O light-emitting diodes[J].Laser & Infrared,2010,40(8):901-903. |
| |
| Authors: | HUANG Rui WANG Dan-qing WANG Xiang and CHEN Kun-ji |
| |
| Affiliation: | Department of Physics and Electrical Engineering,Chaozhou 521041,China;;Department of Physics,Nanjing University,Nanjing 210093,China;Department of Physics and Electrical Engineering,Chaozhou 521041,China;;Department of Physics,Nanjing University,Nanjing 210093,China |
| |
| Abstract: | High efficiency luminescent amorphous silicon nitride films grown at room temperature with subsequent plasma oxidation were used as the active layers in the electroluminescent devices.A strong uniform green-yellow light emission from the devices was realized under forward biased conditions.It was found that the turn-on voltage could be reduced to as low as 6 V under the same forward voltage.The EL peak position is located at 540 nm,which is more close to that of the corresponding photoluminescence peak.The origin of light emission is suggested to be the same kind of luminescent centers related to the Si-O bonds. |
| |
| Keywords: | SiNx electroluminescence photoluminescence |
| 本文献已被 万方数据 等数据库收录！ |
| 点击此处可从《激光与红外》浏览原始摘要信息 |
|
点击此处可从《激光与红外》下载全文 |
|
