Benchmark tests on symmetry and continuity characteristics between BSIM4 and ULTRA-BULK |
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| Authors: | Niu Xudong Li Bo Song Yan Zhang Lining He Jin |
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| Affiliation: | 1. Micro and Nano Electric Device and Integrated Group, The Key Laboratory of Integrated Microsystems,Peking University Shenzhen Graduate School, Shenzhen 518055,China;TSRC, Key Laboratory of Microelectronics, Devices and Circuits of Ministry of Education,School of Electronics and Computer Science, Peking University, Beijing 100871, China
2. TSRC, Key Laboratory of Microelectronics, Devices and Circuits of Ministry of Education,School of Electronics and Computer Science, Peking University, Beijing 100871, China |
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| Abstract: | This paper presents the benchmark test results on the symmetry and continuity characteristics between BSIM4 from Berkeley and ULTRA-BULK from Peking University. It is shown that the industry standard model BSIM4 has a series of the shortcomings of the continuity and symmetry, such as the charge, high-order current derivatives, and the trans-capacitances while the latest advanced surface-potential based MOSFET compact model, ULTRA-BULK, demonstrates all necessary continuity and symmetry characteristics, which are very important for analog and RF circuit design. |
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| Keywords: | compact model BSIM4 ULTRA-BULK circuit design continuity symmetry |
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