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Interfacial layers and their effect on leakage current in mocvd-deposited SBT thin films |
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| Authors: | Harald Bachhofer Hans Reisinger Gernot Steinlesberger Herbert Schroeder Nicolas Nagel Thomas Mdcolajick |
| Affiliation: | 1. Infmeon Technologies AG , 81730, Munich, Germany;2. University of Regensburg , 93040, Regensburg, Germany;3. Infmeon Technologies AG , 81730, Munich, Germany;4. FZJ Research Center Juelich , 52425, Juelich, Germany |
| Abstract: | Abstract Strontium bismuth tantalate (SBT) thin films were deposited on Pt/Ti electrodes by metalorganic chemical vapor deposition (MOCVD). Interactions at the interface of Pt and SBT and their effect on leakage current were investigated. High-resolution transmission electron micrographs (HRTEM) reveal that after annealing at 700°C, a 1–2 nm thick interfacial layer built. Auger electron spectra (AES) confirm that the constituents of SBT intermix with the Pt and vice versa. Schottky emission yields a nice linear fit to the leakage current data but the extracted values of the optical dielectric constant and the Richardson constant do not meet experimental values. Taking into account an interfacial layer with low dielectric constant and the effect of diffusion on the Schottky emission these inconsistencies can be resolved. |
| Keywords: | Ferroelectrics SBT interfacial layer leakage current |