Improvement of Dielectric and Interface Properties of CeO2 Buffer Layer by Using the Metal Seed Layer and N2 Plasma Treatment |
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| Authors: | D G LIM K J YANG D H KIM J H PARK J I LEE J H LEE |
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| Affiliation: | 1. Department of Electronic Engineering Chungju National University , Chungju, Korea , 380-702;2. Department of Information Control Engineering Chungju National University , Chungju, Korea , 380-702;3. Department of Materials Science and Engineering Chungju National University , Chungju, Korea , 380-702;4. School of Electronic and Information Engineering Kunsan National University , Kunsan, Korea , 573-701 |
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| Abstract: | In this paper, we investigated the feasibility of cerium oxide (CeO2) films as buffers layer of MFIS (metal ferroelectric insulator semiconductor) type capacitors. CeO2 layer were prepared by a two-step process of a low temperature film growth and subsequent RTA (rapid thermal annealing) treatment. By applying a cerium (Ce) metal seed layer of 4 nm, unwanted SiO2 layer generation was successfully suppressed at the interface between the buffer layer and the Si substrate. After N2 plasma treatment, the leakage current was reduced by about 2-orders. By employing a N2 plasma treatment, we were able to successfully obtain good properties at the interface between the buffer layer and the Si substrate. |
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| Keywords: | CeO2 RTA metal seed layer |
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